to-126c plastic-encapsulate transistors 3DD13003 transistor (npn) features high total power disspation maximum ratings (t a =25 unless otherwise noted) symbol para meter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current -continuous 1.5 a p c collector power dissipation 1. 2 5 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1 ma, i e =0 700 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 400 v emitter-base breakdown voltage v (br)ebo i e = 1 ma, i c =0 9 v collector cut-off current i cbo v cb =700v,i e =0 1 ma collector cut-off current i ceo v ce =400v,i b =0 0.5 ma emitter cut-off current i ebo v eb =9v, i c =0 1 ma h fe ( 1 ) v ce =5v, i c = 0.5 a 8 40 dc current gain h fe ( 2 ) v ce =5v, i c = 1.5a 5 collector-emitter saturation voltage v ce(sat) i c =1a,i b =0.25a v base-emitter saturation voltage v be(sat) i c =1a,i b =0.25a 1.2 v transition frequency f t v ce =10v,i & =100ma, f =1mhz 5 mhz fall time t f i c =1a, i b1 =-i b2 =0.2a, v cc =100v 0.5 s to-126c 1.base 2.collector 3.emitter storage time t s , & p $ s c , mar ,201 2 base-emitter voltage v be i e = 2 a 3 v & |